18359976. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

TERUAKI Kumazawa of Nisshin-shi (JP)

MASASHI Uecha of Nisshin-shi (JP)

YUJI Nagumo of Nisshin-shi (JP)

MASARU Okuda of Nisshin-shi (JP)

MASATAKE Nagaya of Nisshin-shi (JP)

MITSURU Kitaichi of Settsu-city (JP)

AKIRA Mori of Settsu-city (JP)

NAOYA Kiyama of Settsu-city (JP)

MASAKAZU Takeda of Settsu-city (JP)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359976 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device that includes a semiconductor substrate and a metal layer on its surface. The metal layer consists of a first metal layer and a second metal layer. The second metal layer covers the surface of the first metal layer and has better solder wettability. The second metal layer is exposed on the main surface of the metal layer, while the first metal layer is exposed on the side surface. The metal layer also has a protruding portion on the main surface, which extends along the outer edge of the surface.

• The semiconductor device includes a semiconductor substrate and a metal layer.
• The metal layer consists of a first metal layer and a second metal layer.
• The second metal layer has higher solder wettability than the first metal layer.
• The second metal layer covers the surface of the first metal layer.
• The second metal layer is exposed on the main surface of the metal layer.
• The first metal layer is exposed on the side surface of the metal layer.
• The metal layer has a protruding portion on the main surface, extending along the outer edge.

Potential Applications:

• This technology can be used in various semiconductor devices, such as integrated circuits and microprocessors.
• It can improve the soldering process in electronic manufacturing, ensuring better connections and reliability.

Problems Solved:

• The second metal layer with higher solder wettability solves the issue of poor solder adhesion and reliability.
• The protruding portion on the main surface helps in aligning and positioning the semiconductor device during assembly.

Benefits:

• Improved solder wettability ensures better solder adhesion and reliability.
• The protruding portion aids in the alignment and positioning of the semiconductor device during assembly.
• Enhanced soldering process leads to improved performance and longevity of the semiconductor device.

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate and a metal layer disposed on a surface of the semiconductor substrate. The metal layer includes a first metal layer and a second metal layer. The second metal layer covers a surface of the first metal layer and has a higher solder wettability than the first metal layer. The second metal layer is exposed on a main surface of the metal layer. The first metal layer is exposed on a side surface of the metal layer. The metal layer has a protruding portion on the main surface. The protruding portion extends to make one round along an outer peripheral edge of the main surface.