18359531. MEMORY DEVICE simplified abstract (Kioxia Corporation)

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MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Takashi Inukai of Yokohama Kanagawa (JP)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359531 titled 'MEMORY DEVICE

Simplified Explanation

The memory device described in the patent application includes word lines, bit lines, transistors, capacitors, and a plate line. The transistors consist of first and second transistors, which are connected to first and second word lines, respectively. The first and second transistors are arranged in an alternating pattern in a specific direction. The bit lines are composed of first to fourth bit lines, with the first and third bit lines connected to one end of the first and second transistors, while the second and fourth bit lines are connected to the other end of the transistors in a specific configuration.

  • The memory device includes word lines, bit lines, transistors, capacitors, and a plate line.
  • The transistors are divided into first and second transistors, each connected to specific word lines.
  • The first and second transistors are arranged in an alternating pattern in a specific direction.
  • The bit lines consist of first to fourth lines, with specific connections to the transistors in a unique configuration.

Potential Applications

This technology could be applied in:

  • Computer memory systems
  • Data storage devices
  • Mobile devices

Problems Solved

This technology helps address:

  • Efficient data storage
  • Improved memory access speed
  • Enhanced memory device performance

Benefits

The benefits of this technology include:

  • Increased data storage capacity
  • Faster data retrieval
  • Enhanced overall system performance

Potential Commercial Applications

Optimized for SEO: "Innovative Memory Device Applications"

  • Consumer electronics
  • Cloud computing services
  • Data centers

Possible Prior Art

There may be prior art related to memory devices with similar transistor and bit line configurations, but specific examples are not provided in this patent application.

Unanswered Questions

How does this memory device compare to existing memory technologies on the market?

This article does not provide a direct comparison between this memory device and other existing memory technologies. It would be helpful to understand the specific advantages and disadvantages of this technology in comparison to others.

What are the potential limitations or challenges in implementing this memory device in practical applications?

The article does not address any potential limitations or challenges that may arise in implementing this memory device in real-world scenarios. It would be important to consider factors such as cost, scalability, and compatibility with existing systems.


Original Abstract Submitted

According to one embodiment, a memory device includes word lines, bit lines, transistors, capacitors, and a plate line. The transistors include first transistors and second transistors. The first and second transistors are coupled to first and second word lines, respectively. The first and second transistors are arranged to alternate each other in a first direction. The bit lines include first to fourth bit lines arranged sequentially in the first direction. The first and third bit lines are coupled to the other end of the first and second transistors. The second bit line is coupled to the other end of the first transistors and is not coupled to the other end of the second transistors. The fourth bit line is coupled to the other end of the second transistors and is not coupled to the other end of the first transistors.