18358644. MULTI-WAFER BONDING FOR NAND SCALING simplified abstract (SanDisk Technologies LLC)
Contents
- 1 MULTI-WAFER BONDING FOR NAND SCALING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTI-WAFER BONDING FOR NAND SCALING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Device Integration
- 1.13 Original Abstract Submitted
MULTI-WAFER BONDING FOR NAND SCALING
Organization Name
Inventor(s)
MULTI-WAFER BONDING FOR NAND SCALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358644 titled 'MULTI-WAFER BONDING FOR NAND SCALING
Simplified Explanation
The patent application describes technology for a memory device with multiple dies bonded together, forming an integrated memory assembly. This assembly includes a control semiconductor die and two or more memory semiconductor dies, each containing memory cells and bit lines. The design allows for parallel memory operations and efficient scaling of the device.
- The technology involves a memory device with multiple dies bonded together.
- The integrated memory assembly includes a control semiconductor die and multiple memory semiconductor dies.
- Each memory semiconductor die contains memory cells and bit lines.
- The design enables parallel memory operations and efficient scaling of the device.
Key Features and Innovation
- Memory device with multiple dies bonded together
- Integrated memory assembly with control semiconductor die and memory semiconductor dies
- Memory structure with blocks of memory cells and bit lines
- Separate bit line architecture for parallel memory operations
- Scalability of memory device with multiple dies
Potential Applications
The technology can be used in various memory-intensive applications such as data centers, high-performance computing, and consumer electronics.
Problems Solved
The technology addresses the need for efficient memory operations and scalability in devices with multiple dies bonded together.
Benefits
- Parallel memory operations
- Efficient scaling of memory devices
- Improved performance in memory-intensive applications
Commercial Applications
The technology has potential commercial applications in data centers, high-performance computing systems, and consumer electronics devices.
Prior Art
Readers can explore prior art related to memory devices, integrated memory assemblies, and semiconductor die bonding techniques in the field of memory technology.
Frequently Updated Research
Stay updated on the latest research in memory device integration, semiconductor die bonding, and memory architecture design for improved performance and scalability.
Questions about Memory Device Integration
How does the separate bit line architecture improve memory operations?
The separate bit line architecture allows for parallel memory operations in the integrated memory assembly, enhancing efficiency and performance.
What are the potential challenges in scaling memory devices with multiple dies?
Scaling memory devices with multiple dies may face challenges related to interconnectivity, power consumption, and heat dissipation, which need to be addressed for optimal performance.
Original Abstract Submitted
Technology is disclosed herein for a memory device with multiple dies bonded together. The memory device may be referred to herein as an integrated memory assembly. The integrated memory assembly has a control semiconductor die and two or more memory semiconductor dies. In one embodiment, each memory semiconductor die has a memory structure having blocks of memory cells. Bit lines extend over the respective memory structure. In one embodiment the integrated memory assembly has what is referred to herein as a “separate bit line architecture”. The separate bit line architecture allows the control semiconductor die to control a memory operation in parallel in the two memory semiconductor dies. Moreover, the separate bit line architecture allows for good scaling of a memory device with multiple dies bonded together.
