18357407. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungyung Kim of Suwon-si (KR)
Seungdam Hyun of Suwon-si (KR)
Seungyeul Yang of Suwon-si (KR)
Seokhoon Choi of Suwon-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357407 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Simplified Explanation:
This patent application describes a vertical non-volatile memory device that includes various layers surrounding a pillar, with gate electrodes arranged along the side surface of the device.
- The device includes a pillar, channel layer, charge tunneling layer, charge trap layer with amorphous oxynitride, charge blocking layer, separation layers, and gate electrodes.
- The layers are arranged around the pillar to create a vertical non-volatile memory device.
- The gate electrodes are alternately arranged along the side surface of the charge blocking layer to control the memory device's operation.
Key Features and Innovation:
- Vertical non-volatile memory device design
- Amorphous oxynitride in the charge trap layer
- Gate electrodes for control
Potential Applications:
- Data storage devices
- Embedded systems
- Consumer electronics
Problems Solved:
- Improved data storage capacity
- Enhanced memory device performance
- Better control over memory operations
Benefits:
- Higher storage density
- Faster data access
- More reliable data retention
Commercial Applications:
The vertical non-volatile memory device could be used in various data storage applications, enhancing performance and capacity in consumer electronics, embedded systems, and other devices.
Questions about Vertical Non-Volatile Memory Devices: 1. How does the amorphous oxynitride in the charge trap layer improve the performance of the memory device? 2. What are the potential challenges in scaling up the production of vertical non-volatile memory devices for commercial use?
Original Abstract Submitted
A vertical non-volatile memory device and an electronic apparatus including the vertical non-volatile memory device are provided. The vertical non-volatile memory device includes a pillar, a channel layer surrounding a side surface of the pillar, a charge tunneling layer surrounding a side surface of the channel layer, a charge trap layer surrounding a side surface of the charge tunneling layer and including an amorphous oxynitride, a charge blocking layer surrounding a side surface of the charge trap layer, and a plurality of separation layers and a plurality of gate electrodes surrounding a side surface of the charge blocking layer and alternately arranged along the side surface of the charge blocking layer.
