18356951. SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE simplified abstract (SK hynix Inc.)
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Jin Su Pak of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356951 titled 'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
The semiconductor integrated circuit device described in the patent application consists of a stack structure, a split structure, multiple channel structures, and at least one boundary channel structure. The stack structure comprises insulation layers and conductive layers stacked alternately in a specific direction. The split structure is designed to separate a chosen conductive layer from the adjacent insulation layers. The channel structures are positioned away from the split structure and are arranged within the stack structure. The boundary channel structure partially overlaps with the split structure and is also located within the stack structure.
- The device features a stack structure with insulation and conductive layers stacked alternately.
- A split structure is included to separate a specific conductive layer from adjacent insulation layers.
- Multiple channel structures are present within the stack structure, spaced apart from the split structure.
- At least one boundary channel structure partially overlaps with the split structure within the stack structure.
Potential Applications: - This technology could be utilized in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits for consumer electronics, telecommunications, and computing devices.
Problems Solved: - The technology addresses the need for improved efficiency and performance in semiconductor integrated circuit devices. - It offers a solution for enhancing the functionality and reliability of electronic devices through innovative design.
Benefits: - Enhanced performance and efficiency in semiconductor devices. - Improved reliability and functionality of electronic products. - Potential for advancements in semiconductor technology and integrated circuit design.
Commercial Applications: Title: Advanced Semiconductor Integrated Circuit Devices for Enhanced Performance This technology has the potential for commercial applications in the semiconductor industry, particularly in the development of high-performance integrated circuits for consumer electronics, telecommunications, and computing devices. The innovative design and features of the device could lead to improved efficiency and functionality in a wide range of electronic products, driving market competitiveness and technological advancements.
Questions about the technology: 1. How does the split structure in the semiconductor integrated circuit device contribute to its overall performance? 2. What are the key advantages of the boundary channel structure overlapping with the split structure within the stack design?
Original Abstract Submitted
A semiconductor integrated circuit device includes a stack structure, a split structure, a plurality of channel structures and at least one boundary channel structure. The stack structure includes a plurality of insulation layers and a plurality of conductive layers alternately stacked in a first direction. The split structure is configured to split at least one selected conductive layer among the conductive layers from the insulation layers adjacent to the selected conductive layer. The channel structures are spaced apart from the split structure. The channel structures are arranged in the stack structure. The boundary channel structure is partially overlapped with the split structure. The boundary channel structure is arranged in the stack structure.
