18355860. THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME simplified abstract (SanDisk Technologies LLC)
Contents
THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME
Organization Name
Inventor(s)
Kazuyuki Iwata of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355860 titled 'THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME
The three-dimensional memory device described in the abstract consists of alternating stacks of insulating layers and electrically conductive layers, memory openings filled with memory elements and semiconductor channels, and hybrid support structures that include dielectric support pillars and composite support pillars.
- The memory device features a complex vertical structure with multiple tiers of alternating insulating and conductive layers.
- Memory openings extend vertically through the layers, filled with memory elements and semiconductor channels.
- Hybrid support structures provide structural support through a subset of layers within the device.
- The composite support pillars in the hybrid structures contain additional portions of semiconductor material, enhancing the overall functionality of the device.
- The design of the memory device allows for efficient data storage and retrieval in a three-dimensional space.
Potential Applications: - High-density data storage in compact devices - Advanced computing systems requiring fast and reliable memory access
Problems Solved: - Addressing the need for increased memory capacity in smaller form factors - Enhancing data processing speed and efficiency in complex computing systems
Benefits: - Improved data storage capabilities in a compact design - Enhanced performance and reliability in memory-intensive applications
Commercial Applications: Title: Advanced Three-Dimensional Memory Devices for High-Performance Computing This technology can be utilized in: - Data centers for large-scale data storage and processing - High-performance computing systems for scientific research and simulations
Prior Art: Researchers can explore prior patents related to three-dimensional memory devices, semiconductor materials, and hybrid support structures to understand the evolution of this technology.
Frequently Updated Research: Researchers are continuously exploring new materials and designs to further enhance the performance and efficiency of three-dimensional memory devices.
Questions about Three-Dimensional Memory Devices: 1. How does the hybrid support structure contribute to the overall functionality of the memory device? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
A three-dimensional memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the first-tier alternating stack, memory openings vertically extending through the second-tier alternating stack and the first-tier alternating stack, memory opening fill structures located in the memory openings, wherein each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel including a respective portion of a semiconductor material, and hybrid support structures vertically extending at least through a respective subset of layers within the first-tier alternating stack. Each of the hybrid support structures includes a respective vertical stack of a dielectric support pillar and a composite support pillar having a respective dielectric outer surface and including a respective additional portion of the semiconductor material.
