18355718. SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Jun Hyoung Kim of Suwon-si (KR)
Suk Kang Sung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355718 titled 'SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a cell substrate with multiple gate electrodes stacked on top of each other, a channel structure crossing the gate electrodes, and an input/output pad on the opposite surface. The first mold stack has a mold opening exposing part of the second mold stack, with the input/output pad overlapping the mold opening.
- Explanation of the patent/innovation:
- Cell substrate with stacked gate electrodes - Channel structure crossing gate electrodes - Input/output pad overlapping mold opening
Potential Applications
The technology described in this patent application could be used in various semiconductor memory devices, such as flash memory, DRAM, or SRAM.
Problems Solved
This technology solves the problem of efficiently stacking gate electrodes and channel structures in a semiconductor memory device, improving performance and density.
Benefits
The benefits of this technology include increased memory device performance, higher density, and potentially lower power consumption.
Potential Commercial Applications
"Semiconductor Memory Device with Stacked Gate Electrodes and Overlapping Input/Output Pad" could be used in the production of advanced memory devices for consumer electronics, data storage, and computing applications.
Possible Prior Art
One possible prior art could be the use of stacked gate electrodes in semiconductor memory devices, but the specific configuration described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing memory device designs.
What are the potential manufacturing challenges associated with implementing this technology on a large scale?
This article does not address the potential manufacturing challenges that may arise when implementing this technology on a large scale.
Original Abstract Submitted
A semiconductor memory device includes a cell substrate including a first surface and a second surface opposite to the first surface, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first surface, a second mold stack including a plurality of second gate electrodes sequentially stacked on the first mold stack, a first channel structure extending in a first direction with respect to the first surface and crossing the plurality of first gate electrodes and the plurality of second gate electrodes, and an input/output pad on the second surface, wherein the first mold stack includes a mold opening that exposes a portion of the second mold stack, and at least a portion of the input/output pad overlaps the mold opening in the first direction.
