18355548. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Jae Young Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355548 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the patent application includes various patterns and structures on a substrate, such as active patterns, source/drain patterns, channel patterns, gate electrodes, and a power line.
- The active pattern consists of different regions with varying widths and sidewalls, including a recessed sidewall that connects the first and second sidewalls.
- The gate electrodes are aligned in a parallel manner on the channel patterns in a specific direction.
- The power line runs adjacent to the active pattern in a different direction, providing power to the device.
Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory chips.
Problems Solved: The innovation addresses the need for more efficient and compact semiconductor devices with improved performance and power distribution capabilities.
Benefits: The semiconductor device design allows for better power management, increased functionality, and enhanced overall performance in electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, enabling the development of smaller, faster, and more energy-efficient electronic devices.
Prior Art: Researchers interested in this technology may want to explore prior patents related to semiconductor device design, power distribution in electronic devices, and advanced manufacturing processes.
Frequently Updated Research: Researchers and industry experts may want to stay informed about the latest advancements in semiconductor device design, power distribution technologies, and materials science for electronic applications.
Questions about Semiconductor Device Design: 1. How does the recessed sidewall in the active pattern contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in integrating the power line with the active pattern in semiconductor devices?
Original Abstract Submitted
A semiconductor device includes an active pattern on a substrate, source/drain patterns on the active pattern, channel patterns on the active pattern and connected to the source/drain patterns each including stacked semiconductor patterns, gate electrodes on the channel patterns and extending in parallel to each other in a first direction, and a power line adjacent to the active pattern. The power line extends in a second direction. The active pattern includes a first region having a first width, a second region having a second width, and a third region between the first and second regions. The first region has a first sidewall extending in the second direction. The second region has a second sidewall extending in the second direction. The third region has a recessed sidewall that connects the first and second sidewalls. The recessed sidewall is recessed toward the power line.
