18355520. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Youngwoo Kim of Hwaseong-si (KR)
Geumjung Seong of Suwon-si (KR)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355520 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes a method of manufacturing an integrated circuit device involving the formation of various sacrificial layers and patterns on a semiconductor substrate to create a word line trench.
- Sequentially form lower insulation layer, buried layer, first sacrificial layer, second sacrificial layer, and third sacrificial layer on the semiconductor substrate.
- Remove portions of the sacrificial layers to form sacrificial patterns.
- Use the sacrificial patterns as etch masks to create a buried pattern.
- Use the buried pattern as an etch mask to form a word line trench.
- Potential Applications:**
- Semiconductor manufacturing
- Integrated circuit device production
- Problems Solved:**
- Efficient formation of word line trenches
- Precise patterning on semiconductor substrates
- Benefits:**
- Improved manufacturing process
- Enhanced device performance
- Cost-effective production of integrated circuits
Original Abstract Submitted
A method of manufacturing an integrated circuit device includes preparing a semiconductor substrate having an active area and a field area, sequentially forming a lower insulation layer, a buried layer, a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the semiconductor substrate, removing a portion of the third sacrificial layer to form a first sacrificial pattern, removing a portion of the second sacrificial layer and the first sacrificial pattern to form a second sacrificial pattern, removing a portion of the first sacrificial layer and the second sacrificial pattern to form a third sacrificial pattern, removing a portion of the buried layer and the third sacrificial pattern to form a buried pattern, and removing a portion of the lower insulation layer and a portion of the semiconductor substrate by using the buried pattern as an etch mask to form a word line trench.
