18353758. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Kosuke Sakaguchi of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353758 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor substrate with multiple semiconductor layers, trench gates passing through the layers, and a main electrode connected to the layers.
- Semiconductor substrate with n-type and p-type semiconductor layers
- Trench gates passing through multiple semiconductor layers
- Main electrode connected to the semiconductor layers
Potential Applications
This technology could be used in:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving power efficiency
- Enhancing semiconductor performance
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher power handling capacity
- Improved device performance
- Enhanced overall efficiency
Potential Commercial Applications
This technology could be applied in:
- Power management systems
- Electric vehicles
- Renewable energy systems
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with trench gates and multiple semiconductor layers
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of power efficiency?
This technology offers improved power efficiency compared to existing semiconductor devices due to its design with multiple semiconductor layers and trench gates.
What are the potential challenges in scaling up the production of semiconductor devices using this technology?
One potential challenge in scaling up production could be optimizing the manufacturing process to ensure consistent performance and quality across a large number of devices.
Original Abstract Submitted
A semiconductor device according to the present disclosure includes: a semiconductor substrate including at least: an n-type first semiconductor layer; an n-type second semiconductor layer on the first semiconductor layer; a p-type third semiconductor layer on the second semiconductor layer; and an n-type fourth semiconductor layer on an upper layer part of the third semiconductor layer; a plurality of first trench gates passing through the fourth to second semiconductor layers to reach an inner side of the first semiconductor layer; and a first main electrode having contact with the fourth semiconductor layer; wherein the plurality of first trench gates are disconnected in an electrode extraction region provided in a center part of the active region where main current flows, and are connected to the first main electrode in a first electrode extraction part connected to the first gate electrode in the disconnected part.
