18351888. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Seungyong Yoo of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351888 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation: The patent application describes an integrated circuit device with a unique interconnection structure that includes metal-containing particles dispersed in a lower plug region of a metal plug.
- The device has an insulating structure above a substrate.
- The interconnection structure penetrates the insulating structure and includes a first local protrusion portion.
- The first local protrusion portion protrudes outward from a position adjacent to a lower surface of the insulating structure.
- The metal plug in the interconnection structure contains a first metal and a plurality of metal-containing particles with a second metal.
- The metal-containing particles are irregularly dispersed in a lower plug region of the metal plug.
- The lower plug region is spaced apart from an upper surface of the metal plug and includes the first local protrusion portion.
Potential Applications: 1. Semiconductor manufacturing 2. Electronics industry 3. Integrated circuit design
Problems Solved: 1. Enhancing interconnection efficiency 2. Improving signal transmission 3. Increasing circuit reliability
Benefits: 1. Enhanced performance 2. Improved durability 3. Increased functionality
Commercial Applications: The technology can be applied in the production of advanced electronic devices, such as smartphones, computers, and IoT devices, to enhance their performance and reliability.
Questions about the Technology: 1. How does the irregular dispersion of metal-containing particles in the lower plug region impact the overall functionality of the interconnection structure? 2. What specific advantages does the first local protrusion portion provide in terms of circuit design and performance?
Original Abstract Submitted
An integrated circuit device includes an insulating structure above a substrate, and an interconnection structure penetrating the insulating structure in a first direction and including a first local protrusion portion. The first local protrusion portion protrudes outward in a second direction perpendicular to the first direction from a position adjacent to a lower surface of the insulating structure. The interconnection structure further includes a metal plug including a first metal, and a plurality of metal-containing particles including a second metal that is different from the first metal. The plurality of metal-containing particles are irregularly dispersed in a lower plug region of the metal plug, and the lower plug region is spaced apart from an upper surface of the metal plug and includes the first local protrusion portion.
