18351000. SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE
Organization Name
Inventor(s)
Chang Woo Kang of Icheon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351000 titled 'SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE
The semiconductor device described in the abstract consists of a stacked structure with interlayer insulating layers and horizontal line layers, channel structures, and through electrodes connecting the horizontal line layers.
- The device includes a first logic structure with a lower pass transistor connected to the first through electrode, and a second logic structure with an upper pass transistor connected to the second through electrode.
- The channel structures pass through the interlayer insulating layers and horizontal line layers, allowing for the flow of electrical signals.
- The first logic structure is located under the stacked structure, while the second logic structure is positioned on top of it.
- The through electrodes provide connections between the horizontal line layers, enabling the transmission of signals within the device.
- Overall, the device features a complex yet efficient design that allows for the integration of multiple logic structures within a compact space.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It can be applied in the manufacturing of high-performance integrated circuits for computing and communication systems.
Problems Solved: - The device addresses the need for compact and efficient semiconductor structures with multiple logic elements integrated within a small footprint. - It solves the challenge of connecting different layers and structures within a semiconductor device effectively.
Benefits: - Improved performance and functionality of semiconductor devices. - Enhanced integration of logic structures for increased efficiency. - Compact design for space-saving in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Device for High-Performance Integrated Circuits This technology has significant commercial potential in the semiconductor industry for the development of cutting-edge integrated circuits for various electronic devices. It can cater to the growing demand for high-performance computing and communication systems.
Questions about the technology: 1. How does the integration of multiple logic structures benefit the overall performance of the semiconductor device? 2. What are the specific advantages of using through electrodes in connecting horizontal line layers within the device?
Original Abstract Submitted
A semiconductor device may include a stacked structure including a plurality of interlayer insulating layers and a plurality of horizontal line layers alternately stacked, a plurality of channel structures passing through the plurality of interlayer insulating layers and the plurality of horizontal line layers, and a first through electrode and a second through electrode passing through the plurality of interlayer insulating layers and the plurality of horizontal line layers and connected to the plurality of horizontal line layers. There may be provided a first logic structure which is disposed under the stacked structure and includes a first lower pass transistor connected to the first through electrode. In addition, there may be provided a second logic structure which is disposed on the stacked structure and includes a first upper pass transistor connected to the second through electrode.
