18350874. SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS simplified abstract (Texas Instruments Incorporated)
SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS
Organization Name
Texas Instruments Incorporated
Inventor(s)
Rajat Kulshrestha of BANGALORE (IN)
SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18350874 titled 'SEMICONDUCTOR SWITCHES FOR HIGH VOLTAGE OPERATIONS
Simplified Explanation
The abstract describes a semiconductor switch designed for high voltage operations. It consists of two DE-NMOS FETs, with the first one connected to the input and output nodes and the second one connected to the node. The second FET is controlled by a signal that enables or disables the switch. A voltage source is connected to the node, providing a higher voltage than the input node. A current source supplies current to the voltage source.
- The semiconductor switch is designed for high voltage operations.
- It includes two DE-NMOS FETs, with the first one connected to the input and output nodes.
- The second FET is connected to the node and controlled by a signal.
- A voltage source is connected to the node, providing a higher voltage than the input node.
- A current source supplies current to the voltage source.
Potential Applications
- Power electronics
- High voltage systems
- Electric vehicles
- Renewable energy systems
Problems Solved
- Allows for high voltage operations in a safe operating area
- Enables efficient switching in high voltage applications
Benefits
- Improved safety in high voltage operations
- Enhanced efficiency in high voltage switching
- Suitable for various applications in power electronics and renewable energy systems
Original Abstract Submitted
Semiconductor switches for high voltage operations are described. The semiconductor switch includes a first DE-NMOS FET including a gate coupled to a node of the switch with its source and drain coupled to input and output nodes, respectively. The switch also includes a second DE-NMOS FET with a drain coupled to the node. A gate of the second DE-NMOS FET is configured to receive a signal enabling or disabling the switch. The switch includes a voltage source (e.g., a voltage-controlled voltage source) coupled to the node, which supplies a first voltage at the node. The first voltage is greater than a second voltage at the input node by a predetermined amount such that the first DE-NMOS FET may operate within a safe operating area while supporting high voltage operations. The switch also includes a current source configured to supply current to the voltage source.
