18350524. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS simplified abstract (SanDisk Technologies LLC)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS
Organization Name
Inventor(s)
Monica Titus of Santa Clara CA (US)
Raghuveer S. Makala of Campbell CA (US)
Rahul Sharangpani of Fremont CA (US)
Senaka Kanakamedala of San Jose CA (US)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18350524 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS
The abstract describes a patent application for an etch stop structure formed within a memory opening in a semiconductor device.
- The etch stop structure may include a conductive etch stop plate or a semiconductor plug.
- The structure is formed within a first-tier memory opening that extends through alternating insulating layers and spacer material layers.
- A second-tier alternating stack is formed over the first-tier stack and the etch stop structure.
Potential Applications: - Semiconductor manufacturing - Memory device fabrication - Integrated circuit production
Problems Solved: - Control of etching processes - Precision in semiconductor device manufacturing
Benefits: - Improved device performance - Enhanced reliability - Cost-effective manufacturing processes
Commercial Applications: Title: Semiconductor Device Manufacturing Innovation This technology can be utilized in the production of various semiconductor devices, leading to more efficient and reliable products. The market implications include faster production cycles and higher quality devices.
Questions about the technology: 1. How does the etch stop structure improve semiconductor device manufacturing processes? 2. What are the advantages of using an etch stop plate versus a semiconductor plug in the structure?
Original Abstract Submitted
A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and first spacer material layers. The etch stop structure may include a conductive etch stop plate that is formed over a sacrificial memory opening fill material portion inside the first-tier memory opening, or may include a semiconductor plug which is selectively grown from sidewalls of an etch stop semiconductor material layer that is formed over the first-tier alternating stack. A second-tier alternating stack of second insulating layers and second spacer material layers is formed over the first-tier alternating stack and the etch stop structure.
