18350416. APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR
Organization Name
Inventor(s)
Seungchul Jung of Suwon-si (KR)
Soon-Wan Kwon of Suwon-si (KR)
APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18350416 titled 'APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR
Simplified Explanation
The apparatus described in the abstract includes a static random access memory (SRAM) cell with inverters and transistors connected in a specific configuration.
- The apparatus consists of a static random access memory (SRAM) cell with three inverters, including first and second inverters, and first and second inverter transistors.
- The output terminal of the first inverter is linked to the source terminal of the second inverter transistor.
Potential Applications
This technology could be applied in:
- Memory storage devices
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing data storage efficiency
- Improving memory access speed
Benefits
The benefits of this technology include:
- Faster data retrieval
- Increased memory capacity
Potential Commercial Applications
This technology could be utilized in:
- Computer processors
- Mobile devices
Possible Prior Art
One possible prior art could be the use of similar configurations in memory cells in electronic devices.
Unanswered Questions
How does this technology compare to existing SRAM cell designs?
This article does not provide a direct comparison to existing SRAM cell designs, leaving the reader to wonder about the specific advantages or disadvantages of this new configuration.
What impact could this technology have on the overall performance of electronic devices?
The article does not delve into the potential performance improvements that could result from implementing this new SRAM cell design, leaving a gap in understanding the broader implications of the innovation.
Original Abstract Submitted
An apparatus includes a static random access memory (SRAM) cell including a first inverter and a second inverter, and a third inverter including a first inverter transistor and a second inverter transistor. An output terminal of the first inverter is connected to a source terminal of the second inverter transistor.
