18350323. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyoung Hwan Kim of Suwon-si (KR)
Young Woo Son of Suwon-Si (KR)
Young-Seung Cho of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18350323 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation:
This patent application describes a semiconductor memory device that aims to enhance performance and reliability. The device includes a substrate with distinct cell and peripheral regions, a cell region isolation layer, and multiple cell gate structures.
- The cell gate structures consist of cell gate electrodes that extend in one direction, while the active areas in the cell region extend in a different direction, separated by the cell gate structure.
- Each active area in the cell region is divided into a first and second portion by the cell gate structure, with the second portion on both sides of the first portion.
- The active areas include both normal active areas and dummy active areas to improve overall functionality.
Key Features and Innovation:
- Cell gate structures with cell gate electrodes extending in one direction.
- Active areas in the cell region extending in a different direction, separated by the cell gate structure.
- Division of active areas into first and second portions by the cell gate structure.
- Inclusion of both normal active areas and dummy active areas for enhanced performance.
Potential Applications:
This technology can be applied in various semiconductor memory devices to improve performance and reliability in data storage applications.
Problems Solved:
This technology addresses the need for improved performance and reliability in semiconductor memory devices by optimizing the structure of active areas and cell gate structures.
Benefits:
- Enhanced performance and reliability in semiconductor memory devices.
- Improved data storage capabilities.
- Better overall functionality and efficiency.
Commercial Applications:
Potential commercial applications include the use of this technology in consumer electronics, data centers, and other devices requiring high-performance memory solutions.
Questions about Semiconductor Memory Device:
1. How does the inclusion of dummy active areas contribute to the overall functionality of the semiconductor memory device? 2. What specific advantages does the division of active areas into first and second portions provide in terms of performance and reliability?
Original Abstract Submitted
A semiconductor memory device with improved performance and reliability is provided. The semiconductor memory device includes a substrate having a cell region and a peripheral region, a cell region isolation layer that separates the cell region from the peripheral region, and a plurality of cell gate structures, each including a cell gate electrode that extends in a first direction. The cell region includes a plurality of active areas that extend in a second direction different from the first direction, and are between a respective cell element isolation layer and the cell region isolation layer. Each of the active areas includes a first portion and a second portion separated by the cell gate structure, the second portion of the active area is on both sides of a respective one of the first portion of the active area. The active areas includes a normal active area and a dummy active area.
