18349735. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK Hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Dong Uk Lee of Icheon-si Gyeonggi-do (KR)
Hae Chang Yang of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349735 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application consists of a complex structure involving multiple stacked layers and vertical structures.
- The device includes a first stacked structure with alternating first electrode patterns and first interlayer insulating layers.
- A first vertical structure extends vertically into the first stacked structure.
- An insulating layer is formed over the first stacked structure.
- A coupling structure passes through the insulating layer and is formed over the first vertical structure.
- A second stacked structure is then built on top of the insulating layer, consisting of second electrode patterns and second interlayer insulating layers.
- A second vertical structure extends into the second stacked structure and is formed over the coupling structure.
Potential Applications: - This technology can be used in various semiconductor memory devices, such as flash memory or DRAM. - It can also be applied in other electronic devices requiring high-density memory storage.
Problems Solved: - The innovation addresses the need for increased memory storage capacity in a compact form factor. - It also improves the efficiency and performance of semiconductor memory devices.
Benefits: - Higher memory storage capacity in a smaller footprint. - Enhanced performance and reliability of semiconductor memory devices. - Potential cost savings in manufacturing due to optimized design.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Density Storage This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-capacity memory devices for consumer electronics, data centers, and other applications requiring efficient memory solutions.
Questions about the technology: 1. How does the coupling structure enhance the performance of the semiconductor memory device? 2. What are the specific advantages of the vertical structures in this memory device design?
Original Abstract Submitted
A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a first stacked structure including a plurality of first electrode patterns and a plurality of first interlayer insulating layers that are alternately stacked on each other, a first vertical structure extending into the first stacked structure in a vertical direction, an insulating layer formed over the first stacked structure, a coupling structure passing through the insulating layer and formed over the first vertical structure, a second stacked structure including a plurality of second electrode patterns and a plurality of second interlayer insulating layers that are alternately stacked on each other over the insulating layer, and a second vertical structure extending into the second stacked structure in the vertical direction and formed over the coupling structure.
