18349712. MEMORY CONTROLLER PERFORMING ERROR CORRECTION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
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MEMORY CONTROLLER PERFORMING ERROR CORRECTION AND OPERATING METHOD THEREOF
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MEMORY CONTROLLER PERFORMING ERROR CORRECTION AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349712 titled 'MEMORY CONTROLLER PERFORMING ERROR CORRECTION AND OPERATING METHOD THEREOF
The memory device described in the patent application includes a read controller and an error correction circuit. The read controller performs multiple read retry operations on the memory device, while the error correction circuit conducts several error correction decodings on the read data obtained from these read retry operations.
- The error correction circuit stores Unsatisfied Syndrome Check (USC) values produced by the error correction decodings.
- It then performs a second error correction decoding based on the read data associated with the minimum USC value among the stored USC values.
Potential Applications: - This technology can be applied in various memory devices such as solid-state drives, flash drives, and other storage systems. - It can enhance data reliability and integrity in critical applications like data centers, aerospace systems, and medical devices.
Problems Solved: - Addresses errors in read data by performing multiple error correction decodings and selecting the most reliable data for further processing. - Improves the overall performance and longevity of memory devices by ensuring accurate data retrieval.
Benefits: - Enhanced data accuracy and reliability. - Increased data storage efficiency. - Improved system performance and longevity.
Commercial Applications: Title: Advanced Error Correction Technology for Memory Devices This technology can be utilized in the development of high-performance storage solutions for enterprise-level applications, improving data integrity and system reliability. The market implications include increased demand for reliable memory devices in sectors such as finance, healthcare, and telecommunications.
Prior Art: Researchers and developers can explore prior art related to error correction techniques in memory devices, including studies on error correction codes, data recovery methods, and memory system reliability.
Frequently Updated Research: Stay informed about the latest advancements in error correction technologies for memory devices, including research on advanced error correction algorithms, fault-tolerant memory systems, and data recovery strategies.
Questions about Memory Device Error Correction: 1. How does the error correction circuit determine the minimum USC value for selecting the most reliable read data? 2. What are the key differences between the first and second error correction decodings performed by the error correction circuit?
Original Abstract Submitted
A memory device may include a read controller and an error correction circuit. The read controller may sequentially perform a plurality of read retry operations on a memory device. The error correction circuit may perform a plurality of first error correction decodings on read data respectively acquired from the plurality of read retry operations, store a plurality of Unsatisfied Syndrome Check (USC) values respectively produced by the plurality of first error correction decodings, and perform a second error correction decoding based on read data corresponding to a minimum USC value among the plurality of USC values.
