18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (International Business Machines Corporation)

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FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER

Organization Name

International Business Machines Corporation

Inventor(s)

Jaewoo Jeong of Los Altos CA (US)

Tiar Ikhtiar of San Jose CA (US)

Panagiotis Charilaos Filippou of San Jose CA (US)

Chirag Garg of San Jose CA (US)

Mahesh Govind Samant of San Jose CA (US)

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18348087 titled 'FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER

Simplified Explanation:

The patent application describes a magnetic random-access memory (MRAM) device with specific layers and structures to improve its performance.

  • The device includes a substrate, a bottom magnetic reference layer, a tunnel barrier layer, and a top magnetic free layer.
  • The top magnetic free layer has a chemical templating layer and a magnetic layer.
  • The chemical templating layer contains a binary alloy of FeX with a BiFprototype structure.
  • The magnetic layer consists of a Heusler compound with perpendicular magnetic anisotropy.

Key Features and Innovation:

  • Use of specific layers and structures to enhance the performance of MRAM devices.
  • Incorporation of a chemical templating layer with a binary alloy for improved magnetic properties.
  • Utilization of a Heusler compound with perpendicular magnetic anisotropy for the magnetic layer.

Potential Applications:

The technology can be applied in:

  • Data storage devices
  • Magnetic sensors
  • Spintronics applications

Problems Solved:

  • Enhancing the performance and efficiency of MRAM devices.
  • Improving magnetic properties and stability.

Benefits:

  • Faster data access and storage.
  • Increased reliability and durability.
  • Enhanced magnetic properties.

Commercial Applications:

Title: Advanced Magnetic Random-Access Memory (MRAM) Technology for Improved Data Storage

This technology can be utilized in:

  • Consumer electronics
  • Data centers
  • Automotive industry

Prior Art:

Readers can explore prior research on MRAM devices, chemical templating layers, and Heusler compounds in magnetic storage technologies.

Frequently Updated Research:

Stay updated on advancements in MRAM technology, magnetic materials research, and data storage innovations.

Questions about MRAM Technology:

1. How does the use of a chemical templating layer improve the performance of MRAM devices? 2. What are the advantages of incorporating a Heusler compound with perpendicular magnetic anisotropy in the magnetic layer of MRAM devices?


Original Abstract Submitted

A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of FeX which may have a BiFprototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.

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