18347929. SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347929 titled 'SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with inclined channel layers and a gate electrode surrounding them. This design allows for improved performance and efficiency in electronic devices.
- The semiconductor device includes a first electrode and a second electrode on a substrate, perpendicular to the surface of the substrate.
- There are multiple channel layers between the first and second electrodes, inclined with respect to the direction between them.
- A gate electrode surrounds the channel layers, providing control over the flow of current through the device.
Potential Applications
The semiconductor device with inclined channel layers and a gate electrode can be used in various electronic applications, such as:
- High-performance transistors
- Power amplifiers
- Signal processing circuits
Problems Solved
This technology addresses several challenges in semiconductor device design, including:
- Improving efficiency and performance
- Enhancing control over current flow
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced control and reliability
- Potential for smaller and more compact device designs
Potential Commercial Applications
The semiconductor device with inclined channel layers and a gate electrode has potential commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of gate electrodes in semiconductor devices to control current flow. However, the specific design with inclined channel layers is a unique innovation that sets this technology apart.
Unanswered Questions
How does the inclined channel layers affect the performance of the semiconductor device compared to traditional designs?
The abstract mentions that the channel layers are inclined, but it does not provide specific details on how this design feature impacts the device's performance.
Are there any limitations or drawbacks to using inclined channel layers in semiconductor devices?
While the abstract highlights the benefits of this design, it does not mention any potential limitations or drawbacks that may arise from using inclined channel layers.
Original Abstract Submitted
A semiconductor device may include a first electrode and a second electrode on a substrate and arranged perpendicular to a surface of the substrate, a plurality of channel layers between the first electrode and the second electrode, and a gate electrode surrounding the plurality of channel layers. The plurality of channel layers may be inclined with respect to a direction from the first electrode to the second electrode. An electronic device may include the semiconductor device.
