18347852. SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)

SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

KYUWON Choi of SUWON-SI (KR)

CHANHO Lee of SUWON-SI (KR)

HYEONGCHEOL Kim of SUWON-SI (KR)

SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18347852 titled 'SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF

Simplified Explanation

- A static random access memory (SRAM) includes a memory cell, a reference voltage generator, a precharge circuit, and a sense amplifier. - The memory cell stores data, the reference voltage generator generates a reference voltage, the precharge circuit precharges the bit line and reference bit line, and the sense amplifier compares voltages to determine the stored data value. - The reference voltage generator includes first-type transistors.

• • Potential Applications:**

- Computer memory systems - Embedded systems - Cache memory in processors

• • Problems Solved:**

- Efficient data storage and retrieval - Faster access times compared to dynamic random access memory (DRAM) - Reduced power consumption

• • Benefits:**

- Faster data access speeds - Lower power consumption - Reliable data storage and retrieval

Original Abstract Submitted

A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and pre-charges the bit line and the reference bit line, and a sense amplifier that is connected with the bit line and the reference bit line, compares a voltage of the bit line and a voltage of the reference bit line to generate a comparison result, and determines a value of the data stored in the memory cell based on the comparison result. The reference voltage generator includes first-type transistors.