18347770. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347770 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application includes various components such as a bit line, gate electrode, gate insulation pattern, channel, oxide semiconductor pattern, and contact plug.
- The channel is made of an amorphous oxide semiconductor material, while the oxide semiconductor pattern consists of a crystalline oxide semiconductor material.
- The channel contacts the upper surface of the bit line and the sidewall of the gate insulation pattern.
- The oxide semiconductor pattern contacts the upper sidewall of the channel.
- The contact plug connects the upper surface of the channel and the upper surface of the oxide semiconductor pattern.
Potential Applications: This technology could be used in the development of advanced semiconductor devices for various electronic applications such as memory storage, logic circuits, and display technologies.
Problems Solved: This innovation addresses the need for improved performance and efficiency in semiconductor devices by utilizing specific materials and structures to enhance functionality.
Benefits: The use of amorphous and crystalline oxide semiconductor materials in the device design can lead to increased speed, reduced power consumption, and enhanced overall performance.
Commercial Applications: This technology has the potential to impact the semiconductor industry by enabling the production of more efficient and reliable electronic devices for consumer electronics, communication systems, and other high-tech applications.
Questions about Semiconductor Device with Amorphous and Crystalline Oxide Semiconductor Materials: 1. How does the incorporation of both amorphous and crystalline oxide semiconductor materials benefit the performance of the semiconductor device? 2. What are the specific advantages of using oxide semiconductor materials in this device design?
Original Abstract Submitted
A semiconductor device includes a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, an oxide semiconductor pattern that contacts an upper sidewall of the channel, and a contact plug that contacts an upper surface of the channel and an upper surface of the oxide semiconductor pattern. The channel includes an amorphous oxide semiconductor material. The oxide semiconductor pattern includes a crystalline oxide semiconductor material.
