18347683. DIELECTRIC DENSIFICATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
DIELECTRIC DENSIFICATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Ming Lin of Kaohsiung City (TW)
Szu-Hua Chen of Tainan City (TW)
Wei-Yen Woon of Taoyuan City (TW)
DIELECTRIC DENSIFICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347683 titled 'DIELECTRIC DENSIFICATION
The abstract describes a method for treating a dielectric material with a gaseous species carried in a supercritical fluid to reduce its thickness in a semiconductor structure.
- Semiconductor structure provided
- Dielectric material deposited over the semiconductor structure
- Treatment of the dielectric material with a gaseous species in a supercritical fluid
- Reduction of the thickness of the dielectric material after treatment
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Improving dielectric material properties - Enhancing semiconductor device performance - Reducing manufacturing costs
Benefits: - Enhanced dielectric material properties - Improved semiconductor device efficiency - Cost-effective manufacturing process
Commercial Applications: - Semiconductor industry - Electronics manufacturing sector - Research and development organizations
Questions about the technology: 1. How does the treatment with a gaseous species in a supercritical fluid improve the dielectric material? 2. What are the specific advantages of reducing the thickness of the dielectric material in a semiconductor structure?
Frequently Updated Research: - Ongoing studies on the impact of dielectric material treatments on semiconductor device performance - Research on novel methods for enhancing dielectric properties in semiconductor structures
Original Abstract Submitted
A low thermal budget dielectric material treatment is provided. An example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carried in a supercritical fluid, and after the treating, reducing a thickness of the dielectric material.
