18346125. EXTREMELY HIGH DENSITY SILICON CAPACITOR (International Business Machines Corporation)
Contents
EXTREMELY HIGH DENSITY SILICON CAPACITOR
Organization Name
International Business Machines Corporation
Inventor(s)
Joshua M. Rubin of Albany NY (US)
Alexander Reznicek of Troy NY (US)
Theodorus E. Standaert of Clifton Park NY (US)
Koichi Motoyama of Clifton Park NY (US)
EXTREMELY HIGH DENSITY SILICON CAPACITOR
This abstract first appeared for US patent application 18346125 titled 'EXTREMELY HIGH DENSITY SILICON CAPACITOR
Original Abstract Submitted
A pillar or trench structure in a substrate includes vertical portions and one or more indented cavities in a sidewall between the vertical portions. The indented cavities are partial undercuts substantially traverse to the vertical portions pillar structure, or separate undercuts attached to an anchor. A higher capacitance density is achieved through the layering of multiple conductive contact layers and insulating layers in the undercuts and the vertical portions of the pillar or trench structure.
