18345266. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE
Organization Name
Inventor(s)
Takeshi Iwasaki of Kuwana Mie (JP)
Yosuke Matsushima of Yokkaichi Mie (JP)
Katsuyoshi Komatsu of Yokkaichi Mie (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18345266 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the patent application includes multiple conductive layers, a resistance change layer, and a switching layer with specific substances.
- The memory device consists of a first, second, and third conductive layer, with a resistance change layer between the first and second layers, and a switching layer between the second and third layers.
- The switching layer contains at least one substance from a group including oxides of elements such as Cr, La, Ce, Y, Sc, Zr, and Hf, nitrides of these elements, and oxynitrides of these elements.
- Additionally, the switching layer includes at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn, as well as substances derived from these metals.
Potential Applications
This technology could be used in:
- Non-volatile memory devices
- Resistive random-access memory (RRAM)
- Neuromorphic computing
Problems Solved
- Enhanced memory performance
- Improved data retention
- Lower power consumption
Benefits
- Faster data access
- Increased memory density
- Extended device lifespan
Potential Commercial Applications
Optimized for:
- Consumer electronics
- Data storage solutions
- IoT devices
Possible Prior Art
There may be prior art related to:
- Resistive switching memory devices
- Materials science research in memory technologies
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and reliability?
The article does not provide a direct comparison with other memory devices on the market.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability or manufacturing challenges of implementing this memory device on a larger scale.
Original Abstract Submitted
According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.
