18339569. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chunghwan Shin of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18339569 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the patent application includes a middle insulating structure on a substrate, with a first contact structure passing through the middle insulating structure and extending by a first vertical length from a top surface of the middle insulating structure toward the substrate, and a second contact structure passing through the middle insulating structure. The second contact structure extends by a second vertical length greater than the first vertical length from the top surface of the middle insulating structure toward the substrate. The first contact structure has a first top surface extending planar along an extension line of the top surface of the middle insulating structure, while the second contact structure has a second top surface that is convex in a direction away from the substrate.
- Middle insulating structure on a substrate
- First contact structure passing through the middle insulating structure
- Second contact structure passing through the middle insulating structure
- Different vertical lengths for the first and second contact structures
- Top surfaces of the contact structures have different shapes
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Improving signal transmission efficiency
- Enhancing device performance
- Reducing signal interference
Benefits
The benefits of this technology include:
- Higher integration density
- Improved reliability
- Enhanced functionality
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Mobile devices
- Computer hardware
- Communication systems
Possible Prior Art
One possible prior art for this technology could be:
- Existing integrated circuit structures with contact structures passing through insulating layers
What materials are used in the middle insulating structure?
The materials used in the middle insulating structure are not specified in the abstract. Further details from the full patent application may provide information on the specific materials used.
How does the convex shape of the second contact structure benefit the device?
The abstract mentions that the second contact structure has a convex shape in a direction away from the substrate. This feature may help in improving the electrical properties of the device, but the exact mechanism and benefits are not elaborated. Further information from the detailed description in the patent application could shed light on this aspect.
Original Abstract Submitted
An integrated circuit device includes a middle insulating structure on a substrate, a first contact structure passing through the middle insulating structure and extending by a first vertical length from a top surface of the middle insulating structure toward the substrate, and a second contact structure passing through the middle insulating structure. The middle insulating structure may have a top surface extending in a lateral direction at a first vertical level. The second contact structure may extend by a second vertical length greater than the first vertical length from the top surface of the middle insulating structure toward the substrate. The first contact structure may have a first top surface extending planar along an extension line of the top surface of the middle insulating structure. The second contact structure may have a second top surface, which may be convex in a direction away from the substrate.
