18338088. MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Da Mi Yim of Icheon-si Gyeonggi-do (KR)
Ki Hong Lee of Icheon-si Gyeonggi-do (KR)
Yoo Hyun Noh of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18338088 titled 'MEMORY DEVICE
The memory device described in the patent application includes a word line with a cell array region and a connection region, along with first and second select lines intersecting the word line in a specific direction.
- The memory device features an isolation pattern between the first and second select lines, consisting of sub-isolation patterns extending in different directions.
- The second select line is designed to bend around an outside corner formed by the intersection of the sub-isolation patterns in the isolation pattern.
Potential Applications:
- This technology could be used in various memory devices such as DRAM or flash memory.
- It may find applications in data storage systems, consumer electronics, and industrial automation.
Problems Solved:
- The design addresses issues related to signal interference and cross-talk in memory devices.
- It improves the efficiency and reliability of data storage and retrieval processes.
Benefits:
- Enhanced performance and stability of memory devices.
- Reduction in data errors and improved overall system functionality.
Commercial Applications:
- The technology could be valuable for semiconductor manufacturers, memory device producers, and companies involved in data storage solutions.
- It has the potential to impact the market for memory devices and related technologies significantly.
Prior Art:
- Readers interested in exploring prior art related to this technology may look into patents or research papers on memory device design and signal isolation techniques.
Frequently Updated Research:
- Stay updated on advancements in memory device technology, semiconductor manufacturing processes, and signal isolation methods to enhance the efficiency and performance of memory devices.
Questions about Memory Device Isolation Technology: 1. How does the isolation pattern in the memory device contribute to signal integrity and data reliability? 2. What are the key differences between this memory device design and traditional memory architectures in terms of signal isolation and interference mitigation?
Original Abstract Submitted
A memory device includes a word line including a cell array region and a connection region extending in a first direction from the cell array region; a first select line and a second select line, spaced apart from each other in a second direction intersecting the first direction on the cell array region, the first select line and the second select line, extending onto the connection region of the word line; and an isolation pattern disposed between the first select line and the second select line. The isolation pattern includes a first sub-isolation pattern extending in the first direction and a second sub-isolation pattern extending in the second direction from the first sub-isolation pattern. The second select line is bent to surround an outside corner defined at an intersection point of the first sub-isolation pattern and the second sub-isolation pattern of the isolation pattern.
