18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR STORAGE DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Hiroki Date of Chigasaki Kanagawa (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18337589 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The patent application describes a semiconductor storage device with memory cell transistors and a word line connected to the memory cell transistors. The device includes a voltage generator that generates a first voltage to the word line using a voltage divider with variable resistance elements controlled by a digital signal. The control unit adjusts the resistance value of the variable resistance element to create different waveforms of the first voltage for erasing verifying and reading operations.
- Memory cell transistors and word line in semiconductor storage device
- Voltage generator with variable resistance elements for generating first voltage
- Control unit adjusts resistance value to create different waveforms for operations
Potential Applications
The technology described in the patent application could be applied in various semiconductor storage devices such as flash memory, SSDs, and other memory systems where precise control of voltage waveforms is required.
Problems Solved
1. Precise control of voltage waveforms for different operations in semiconductor storage devices. 2. Optimization of memory cell transistor performance during erasing verifying and reading operations.
Benefits
1. Improved reliability and performance of semiconductor storage devices. 2. Enhanced data retention and integrity in memory systems. 3. Efficient utilization of variable resistance elements for voltage generation.
Potential Commercial Applications
Optimized Voltage Waveform Control in Semiconductor Storage Devices
Possible Prior Art
Prior art may include patents or publications related to voltage generation and control in semiconductor devices, as well as research on memory cell transistor performance optimization.
Unanswered Questions
How does the variable resistance element impact the overall power consumption of the semiconductor storage device?
The article does not provide information on the power consumption implications of using variable resistance elements in the voltage generator.
Are there any limitations to the scalability of this technology for different memory cell transistor configurations?
The article does not address potential limitations or challenges in scaling this technology for diverse memory cell transistor layouts or designs.
Original Abstract Submitted
In one embodiment, a semiconductor storage device includes memory cell transistors, and a word line electrically connected to the memory cell transistors. The device further includes a voltage generator configured to generate a first voltage transferred to the word line, the voltage generator including a voltage divider configured to divide the first voltage with first and second resistance elements, the first or second resistance element being a variable resistance element that receives a first digital signal indicating a resistance value and is changeable to the resistance value. The device further includes a control unit configured to output the first digital signal, wherein the control unit outputs the first digital signal such that a theoretical waveform of the first voltage in boosting the first voltage in an erasing verifying operation is different from a theoretical waveform of the first voltage in boosting the first voltage in a reading operation.
