18335691. FUNNELED SOURCE/DRAIN INTERFACIAL REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Shogo Mochizuki of Mechanicville NY (US)

Erin Stuckert of Albany NY (US)

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

This abstract first appeared for US patent application 18335691 titled 'FUNNELED SOURCE/DRAIN INTERFACIAL REGION

Original Abstract Submitted

A transistor includes a funneled interfacial source/drain (S/D) region that includes a narrow throat that is connected to or is an interface to the nanolayer channel. The funneled interfacial S/D region may also include a wide throat that is an interface to a remainder of the S/D region. The funneled interfacial source/drain (S/D) region may reduce parasitic resistance or impedance from the S/D region into or out of a nanolayer channel.