18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
Organization Name
Inventor(s)
Changseok Lee of Suwon-si (KR)
Seunggeol Nam of Suwon-si (KR)
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18335492 titled 'VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
Simplified Explanation
The abstract describes a nonvolatile memory device with a channel layer, gate electrodes, spacers, and a gate insulating layer. The channel layer includes a two-dimensional semiconductor material with an electrically p-type property.
- The nonvolatile memory device includes a channel layer, gate electrodes, spacers, and a gate insulating layer.
- The channel layer consists of a two-dimensional semiconductor material with an electrically p-type property.
- The gate electrodes and spacers are alternately arranged in a direction perpendicular to the channel layer.
- The gate insulating layer is positioned between the channel layer and the gate electrodes.
Potential Applications
The technology described in this patent application could be applied in:
- Nonvolatile memory devices
- Semiconductor manufacturing
- Electronics industry
Problems Solved
This technology helps address the following issues:
- Enhancing memory storage capabilities
- Improving semiconductor device performance
- Increasing data retention in nonvolatile memory
Benefits
The benefits of this technology include:
- Higher memory density
- Faster data access speeds
- Enhanced overall device efficiency
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Solid-state drives (SSDs)
- Mobile devices
- Embedded systems
Possible Prior Art
One possible prior art related to this technology is the use of two-dimensional semiconductor materials in memory devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing nonvolatile memory devices in terms of speed and capacity?
This article does not provide a direct comparison with existing nonvolatile memory devices in terms of speed and capacity. Further research or testing may be needed to determine the exact performance differences.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing. Factors such as cost, scalability, and compatibility with existing processes could be significant hurdles that need to be explored further.
Original Abstract Submitted
A nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers alternately arranged with each other in the first direction, and a gate insulating layer extending in the first direction. Each of the plurality of gate electrodes and each of the plurality of spacers may extend in a second direction crossing the first direction. The gate insulating layer may extend in the first direction. The gate insulating layer may be between the channel layer and the plurality of gate electrodes. The channel layer may include a two-dimensional semiconductor material having an electrically p-type property.
