18335358. NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Jung-Hwan Lee of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18335358 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract of a patent application describes a non-volatile memory device with a unique channel structure.
- The device includes a first stacking structure, a second stacking structure, a first channel structure penetrating the first stacking structure, and a second channel structure penetrating the second stacking structure.
- The second channel structure has a first portion with a width that decreases or remains constant as it extends towards the substrate, and a second portion with a width that increases as it extends towards the substrate.
Potential Applications: - This technology could be used in various electronic devices that require non-volatile memory storage, such as smartphones, tablets, and laptops.
Problems Solved: - The innovative channel structure design addresses the need for efficient and reliable non-volatile memory storage solutions in electronic devices.
Benefits: - Improved performance and reliability of non-volatile memory devices. - Enhanced data storage capacity in electronic devices. - Cost-effective manufacturing process for memory devices.
Commercial Applications: - The technology can be applied in the consumer electronics industry to enhance the performance and storage capacity of devices, leading to potential market advantages for manufacturers.
Questions about the technology: 1. How does the unique channel structure design improve the performance of non-volatile memory devices? 2. What potential challenges could arise in implementing this technology in commercial electronic devices?
Original Abstract Submitted
A non-volatile memory device may include a channel structure including a first stacking structure, a second stacking structure, a first channel structure penetrating the first stacking structure, and a second channel structure penetrating the second stacking structure. The second channel structure includes a first portion having a width that decreases or is maintained as the first portion extends toward the substrate, and a second portion having a width that increases as the second portion extends toward the substrate.
