18334720. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yasuyuki Sonoda of Kumage (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18334720 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first conductor, a second conductor, an oxide semiconductor layer, first and second wirings, insulating films, first and second insulating layers with voids.
- The device consists of a first conductor, a second conductor, and an oxide semiconductor layer sandwiched between them.
- A first wiring extends across the oxide semiconductor layer in a different direction, with an insulating film separating it from the oxide semiconductor layer.
- A second wiring is provided on the second conductor, extending in a different direction from the first wiring.
- The first insulating layer on the side of the second wiring has a void, followed by a second insulating layer with another void.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced performance, reliability, and efficiency. By incorporating specific structures and materials, the device can overcome challenges related to signal transmission, power consumption, and heat dissipation.
Benefits
The semiconductor device outlined in the patent application offers benefits such as increased functionality, reduced power consumption, improved signal integrity, and enhanced durability. These advantages can lead to the development of more efficient electronic systems and devices.
Potential Commercial Applications
The technology described in this patent application has the potential for commercial applications in industries such as consumer electronics, telecommunications, automotive, and healthcare. The innovative features of the semiconductor device could attract interest from manufacturers looking to enhance their product offerings.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with oxide semiconductor layers and multiple wiring layers. Previous patents or research papers focusing on advanced semiconductor structures may also contain relevant information.
Unanswered Questions
How does this technology compare to existing semiconductor devices on the market?
The article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance, cost, or scalability. Further analysis or testing would be needed to evaluate its competitiveness in the market.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not detail the specific manufacturing processes or techniques required to fabricate this semiconductor device. Understanding the production methods could provide insights into the feasibility and scalability of implementing this technology in mass production.
Original Abstract Submitted
A semiconductor device includes: a first conductor; a second conductor; an oxide semiconductor layer provided between the first conductor and the second conductor and extending in a first direction; a first wiring extending in a second direction across the first direction and surrounding the oxide semiconductor layer; an insulating film provided between the first wiring and the oxide semiconductor layer; a second wiring provided on the second conductor and extending in a third direction across each of the first direction and the second direction; a first insulating layer provided on a side surface of the second wiring and having a first void; and a second insulating layer provided on the first insulating layer and having a second void.
