18334011. SUBSTRATE PROCESSING BAFFLE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND PROCESSING APPARATUS FABRICATION METHOD simplified abstract (Samsung Electronics Co., Ltd.)

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SUBSTRATE PROCESSING BAFFLE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND PROCESSING APPARATUS FABRICATION METHOD

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

SANGJINE Park of Suwon-si (KR)

Ji Hwan Park of Suwon-si (KR)

KUNTACK Lee of Suwon-si (KR)

SUBSTRATE PROCESSING BAFFLE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND PROCESSING APPARATUS FABRICATION METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18334011 titled 'SUBSTRATE PROCESSING BAFFLE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND PROCESSING APPARATUS FABRICATION METHOD

Simplified Explanation

The patent application describes substrate processing baffles for use in substrate processing apparatuses. These baffles have a plate body with a central axis and an upper body connected to the plate body, including upper and lower flow paths. The plate body also has a coupling hole with a placement hole that decreases in width towards the top surface.

  • The substrate processing baffle comprises a plate body with a central axis and an upper body connected to it.
  • The plate body includes upper and lower flow paths for processing substrates.
  • The coupling hole in the plate body has a placement hole that narrows towards the top surface.

Potential Applications

The technology can be applied in semiconductor manufacturing processes, such as etching and deposition, where precise control of gas flow is crucial.

Problems Solved

The substrate processing baffles help improve gas flow control and distribution during substrate processing, leading to more uniform and efficient processing results.

Benefits

- Enhanced gas flow control - Improved substrate processing uniformity - Increased processing efficiency

Potential Commercial Applications

"Enhancing Gas Flow Control in Semiconductor Manufacturing Processes"

Possible Prior Art

There may be prior art related to gas flow control devices in semiconductor processing equipment, but specific examples are not provided in the abstract.

Unanswered Questions

How does this technology compare to existing gas flow control devices in terms of efficiency and uniformity?

The article does not provide a direct comparison with existing gas flow control devices, so it is unclear how this technology stacks up against current solutions.

What are the potential limitations or drawbacks of using these substrate processing baffles in industrial applications?

The abstract does not mention any potential limitations or drawbacks of the technology, leaving room for further exploration into its practical implications and challenges.


Original Abstract Submitted

Disclosed are substrate processing baffles, substrate processing apparatuses, and substrate processing apparatus fabrication methods. The substrate processing baffle comprises a plate body having a central axis that extends in a first direction, and an upper body on the plate body. The upper body includes an upper flow path connected to a top surface of the upper body. The plate body includes a lower flow path connected to the upper flow path and a bottom surface of the plate body, and a coupling hole extending through a top surface of the plate body. The coupling hole includes a placement hole. The placement hole includes a position setting aperture whose width decreases with decreasing distance from the top surface of the plate body.