18333756. MEMORY DEVICE INCLUDING SENSE AMPLIFYING CIRCUIT simplified abstract (SK Hynix Inc.)
Contents
MEMORY DEVICE INCLUDING SENSE AMPLIFYING CIRCUIT
Organization Name
Inventor(s)
Woongrae Kim of Icheon-si (KR)
Jung Min Yoon of Icheon-si (KR)
MEMORY DEVICE INCLUDING SENSE AMPLIFYING CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18333756 titled 'MEMORY DEVICE INCLUDING SENSE AMPLIFYING CIRCUIT
The memory device described in the patent application includes a sense amplifying circuit, a fail detection circuit, and a sense amplifying control circuit.
- The sense amplifying circuit is responsible for sensing and amplifying data of bit lines based on a sensing control signal.
- The fail detection circuit calculates counting values of fail bits for each temperature using the data and generates a minimum error code for each temperature by detecting the minimum value from the counting values.
- The sense amplifying control circuit drives the pull-up and pull-down voltage lines by generating corresponding voltages based on the minimum error code for each temperature. It also generates the sensing control signal according to a test mode signal.
Potential Applications: - This technology can be applied in various memory devices such as RAM, ROM, and flash memory. - It can also be used in temperature-sensitive environments where accurate data sensing and amplification are crucial.
Problems Solved: - Addresses the need for reliable data sensing and amplification in memory devices. - Helps in detecting and minimizing errors related to fail bits at different temperatures.
Benefits: - Improved data accuracy and reliability in memory devices. - Enhanced error detection and correction capabilities. - Optimal performance in temperature-varying conditions.
Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Data Accuracy This technology can be utilized in the manufacturing of high-performance memory modules for computers, servers, and other electronic devices. It can also find applications in data centers, IoT devices, and automotive electronics.
Questions about Memory Device Technology: 1. How does the fail detection circuit calculate counting values of fail bits? The fail detection circuit calculates counting values of fail bits by analyzing the data from the memory device and determining the occurrence of errors at different temperatures.
2. What is the role of the sense amplifying control circuit in the memory device? The sense amplifying control circuit is responsible for driving the voltage lines and generating the sensing control signal based on the minimum error code for each temperature, ensuring accurate data sensing and amplification.
Original Abstract Submitted
A memory device includes a sense amplifying circuit coupled between a pull-up voltage line and a pull-down voltage line and configured to sense and amplify data of bit lines according to a sensing control signal; a fail detection circuit configured to calculate counting values of fail bits for each temperature based on the data and configured to generate a minimum error code for each temperature by detecting a minimum value for each temperature from the counting values for each temperature, in response to a test mode signal; and a sense amplifying control circuit configured to drive the pull-up voltage line and the pull-down voltage line by generating a pull-up voltage and a pull-down voltage corresponding to current temperature information based on the minimum error code for each temperature and configured to generate the sensing control signal according to the test mode signal.
