18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
Contents
- 1 MEMORY DEVICE AND OPERATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Device Programming
- 1.13 Original Abstract Submitted
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Jong Woo Kim of Icheon-si Gyeonggi-do (KR)
Young Cheol Shin of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18333366 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
Simplified Explanation
The memory device described in the patent application can program two pages simultaneously during a program operation, based on different sets of page data.
Key Features and Innovation
- Memory device with a memory cell array and peripheral circuit for program operations.
- Control logic enables programming of two pages at once during a program operation.
- One page is programmed based on one set of page data, while the other page is programmed based on a different set of page data.
Potential Applications
This technology could be used in various memory devices such as solid-state drives, flash memory, and other storage devices where simultaneous programming of multiple pages is beneficial.
Problems Solved
- Efficient programming of multiple pages during a program operation.
- Optimizing memory cell array performance by programming two pages based on different sets of data simultaneously.
Benefits
- Faster program operations in memory devices.
- Improved overall performance and efficiency of memory cell arrays.
- Enhanced data storage capabilities.
Commercial Applications
The technology could be applied in the development of high-speed, high-capacity memory devices for consumer electronics, data centers, and other storage-intensive applications.
Prior Art
Readers interested in prior art related to this technology can explore patents and research papers on multi-page programming in memory devices, as well as advancements in memory cell array control logic.
Frequently Updated Research
Researchers are continually exploring ways to enhance memory device performance, including multi-page programming techniques and control logic optimizations.
Questions about Memory Device Programming
How does simultaneous programming of two pages improve memory device performance?
Simultaneous programming reduces the time taken to program multiple pages, enhancing overall efficiency and speed of memory operations.
What are the potential challenges in implementing control logic for programming two pages simultaneously?
Implementing control logic for simultaneous programming may require careful synchronization of data and operations to ensure accurate and reliable programming of both pages.
Original Abstract Submitted
A memory device includes a memory cell array including a plurality of pages; a peripheral circuit for performing a program operation; and a control logic for controlling the peripheral circuit to, when a program command for a first page among the plurality of pages and a plurality of page data are received, program a second page based on one page data among the plurality of page data, and program the first page based on other page data, according to a stage of the program operation.
