18333191. IMAGE SENSORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Ja Meyung Kim of Suwon-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18333191 titled 'IMAGE SENSORS
Simplified Explanation
The abstract describes an image sensor that includes a substrate with two faces, a photoelectric conversion area, an active area, an element isolation pattern, and a transfer gate electrode. The transfer gate electrode has a first portion that extends through the element isolation pattern and a second portion on the active area.
- The image sensor includes a substrate with two faces, a photoelectric conversion area, an active area, an element isolation pattern, and a transfer gate electrode.
- The transfer gate electrode has a first portion that extends through the element isolation pattern and a second portion on the active area.
- The first portion of the transfer gate electrode extends through the bottom face of the element isolation pattern at a lower vertical level than the bottom face of the element isolation pattern.
Potential applications of this technology:
- Image sensors are commonly used in digital cameras, smartphones, and other devices that capture images. This technology can improve the performance and efficiency of image sensors, leading to better image quality in these devices.
- The image sensor can be used in surveillance cameras, allowing for high-quality image capture in various lighting conditions.
- Medical imaging devices, such as X-ray machines and ultrasound scanners, can benefit from this technology to enhance image resolution and sensitivity.
Problems solved by this technology:
- The element isolation pattern helps to define the active area and prevent interference between different components of the image sensor, improving the accuracy and reliability of image capture.
- The transfer gate electrode design allows for efficient transfer of charge from the photoelectric conversion area to the active area, reducing noise and improving the signal-to-noise ratio of the image sensor.
Benefits of this technology:
- Improved image quality: The technology enhances the performance of image sensors, resulting in sharper, clearer, and more detailed images.
- Higher sensitivity: The design of the transfer gate electrode improves the sensitivity of the image sensor, allowing for better image capture in low-light conditions.
- Enhanced efficiency: The element isolation pattern and transfer gate electrode design optimize the functionality of the image sensor, leading to improved energy efficiency and longer battery life in devices that use this technology.
Original Abstract Submitted
An image sensor includes a substrate including a first face and a second face, the second face being opposite the first face in a first direction; a photoelectric conversion area disposed in the substrate; an active area disposed in the substrate and on the photoelectric conversion area; an element isolation pattern extending from the first face of the substrate into the substrate and defining the active area; and a transfer gate electrode including: a first portion extending from the first face of the substrate and extending through the element isolation pattern; and a second portion disposed on the active area, wherein the first portion extends through a bottom face of the element isolation pattern, wherein a vertical level of a bottom face of the first portion is lower than a vertical level of the bottom face of the element isolation pattern.
