18333084. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jongyeong Min of Suwon-si (KR)
Changhwa Jung of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18333084 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The method of manufacturing an integrated circuit device involves several steps:
- Formation of a plurality of lower electrodes above a substrate.
- Formation of a supporter that is designed to support the lower electrodes.
- Formation of a dielectric film on both the lower electrodes and the supporter.
- Formation of an upper electrode on top of the dielectric film.
The dielectric film consists of multiple layers:
- A lower leakage current prevention layer is present on the outer surface of each lower electrode and the supporter.
- A first capacitor material layer is formed on top of the lower leakage current prevention layer.
- An upper material layer is formed on top of the first capacitor material layer.
- A second capacitor material layer is formed on top of the upper material layer.
Potential applications of this technology:
- Manufacturing of integrated circuit devices, such as microchips and electronic components.
- Production of capacitors used in various electronic devices.
Problems solved by this technology:
- Prevention of leakage current, which can improve the performance and reliability of integrated circuit devices.
- Enhanced support for the lower electrodes, ensuring stability and durability of the device.
Benefits of this technology:
- Improved performance and reliability of integrated circuit devices.
- Increased stability and durability of the device.
- Enhanced manufacturing process for capacitors used in electronic devices.
Original Abstract Submitted
A method of manufacturing an integrated circuit device may include forming a plurality of lower electrodes above a substrate, forming a supporter configured to support the plurality of lower electrodes, forming a dielectric film on the plurality of lower electrodes and the supporter, and forming an upper electrode on the dielectric film. The dielectric film may include a lower leakage current prevention layer on an outer surface of each of the plurality of lower electrodes and an outer surface of the supporter, a first capacitor material layer on the lower leakage current prevention layer, an upper material layer on the first capacitor material layer, and a second capacitor material layer on the upper material layer.
