18332413. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Kyeongock Chong of Suwon-si (KR)
Myunghun Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18332413 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes a bit line structure, first and second spacers, and a substrate. The bit line structure consists of a conductive structure and an insulation structure stacked vertically on the substrate. The first and second spacers are stacked horizontally on the sidewall of the bit line structure. The conductive structure has a nitrogen-containing conductive portion at a lateral part, which is in contact with the first spacer.
- The semiconductor device includes a bit line structure with a conductive and insulation structure stacked vertically.
- First and second spacers are stacked horizontally on the sidewall of the bit line structure.
- The conductive structure has a nitrogen-containing conductive portion.
- The first spacer is in contact with the nitrogen-containing conductive portion.
Potential Applications:
- This technology can be used in the manufacturing of semiconductor devices such as memory chips and processors.
- It can improve the performance and efficiency of these devices by enhancing the conductivity and insulation properties.
Problems Solved:
- The technology addresses the challenge of improving the conductivity and insulation properties of semiconductor devices.
- It solves the problem of efficiently stacking spacers on the sidewall of the bit line structure.
Benefits:
- Enhanced conductivity and insulation properties improve the overall performance and efficiency of semiconductor devices.
- Efficient stacking of spacers allows for better utilization of space and improved manufacturing processes.
Original Abstract Submitted
A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The first spacer and the second spacer may be stacked in a horizontal direction on a sidewall of the bit line structure. The horizontal direction may be substantially parallel to the upper surface of the substrate. The conductive structure may include a nitrogen-containing conductive portion at a lateral portion thereof. The first spacer may contact the nitrogen-containing conductive portion.
