18328192. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seyun Kim of Suwon-si (KR)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

Joonsuk Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18328192 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

The abstract describes a nonvolatile memory device with a channel layer, gate electrodes, insulating layers, charge trap layer, and charge tunneling layer.

• Channel layer present in the nonvolatile memory device.
• Plurality of gate electrodes and insulating layers arranged alternately.
• Charge trap layer located between the channel layer and a gate electrode.
• Charge tunneling layer positioned between the channel layer and the charge trap layer.

Potential Applications: - Data storage devices - Embedded systems - Consumer electronics

Problems Solved: - Enhanced data retention - Improved memory performance - Increased durability

Benefits: - Higher data security - Faster data access - Extended lifespan of memory devices

Commercial Applications: Title: Nonvolatile Memory Device for Enhanced Data Storage This technology can be used in various commercial applications such as solid-state drives, smart cards, and industrial automation systems. The market implications include improved data storage solutions, increased efficiency in data processing, and enhanced reliability in electronic devices.

Questions about Nonvolatile Memory Devices: 1. How does the charge trap layer contribute to the performance of the memory device? The charge trap layer helps in trapping and retaining charges, which enhances the data retention capabilities of the memory device.

2. What are the advantages of using a nonvolatile memory device over traditional volatile memory solutions? Nonvolatile memory devices offer higher data security, improved durability, and longer lifespan compared to volatile memory solutions.

Original Abstract Submitted

Provided is a nonvolatile memory device. The nonvolatile memory device includes: a channel layer; a plurality of gate electrodes and a plurality of insulating layers being spaced apart from the channel layer and being alternately arranged; a charge trap layer between the channel layer and a gate electrode, and a charge tunneling layer between the channel layer and the charge trap layer.