18326103. DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)
DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SANGHYUNG Lim of Yongin-si (KR)
DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18326103 titled 'DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The display panel described in the patent application includes a base layer with a trench partially removed from the upper surface, a light blocking pattern overlapping the trench, and a pixel with a transistor and a light emitting element connected to it.
- The base layer has a trench partially removed from the upper surface, defined by a side surface and a bottom surface.
- A light blocking pattern is on the base layer, at least partially overlapping the trench.
- The pixel includes a transistor with a semiconductor pattern overlapping the trench, a first electrode, a second electrode, and a gate.
- A light emitting element is electrically connected to the transistor, with part of the semiconductor pattern parallel to the side surface.
Potential Applications
- Display panels for electronic devices
- OLED screens for smartphones and TVs
Problems Solved
- Improved light blocking for better display quality
- Efficient pixel design for enhanced performance
Benefits
- Enhanced display quality with improved light blocking
- Efficient pixel design for better performance and energy efficiency
Original Abstract Submitted
A display panel includes a base layer having an upper surface and a lower surface opposite to the upper surface and including a trench partially removed from the upper surface in a thickness direction of the base layer and defined by a side surface connected to the upper surface and a bottom surface connected to the side surface, a light blocking pattern at least partially overlapping the trench in a plan view and disposed on the base layer, and a pixel including a first transistor including a semiconductor pattern at least partially overlapping the trench in a plan view, a first electrode, a second electrode, and a gate, and a light emitting element electrically connected to the first transistor. At least a portion of the semiconductor pattern is parallel to the side surface.