18323999. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Jung Shik Jang of Icheon-si Gyeonggi-do (KR)

In Su Park of Icheon-si Gyeonggi-do (KR)

Won Geun Choi of Icheon-si Gyeonggi-do (KR)

Jung Dal Choi of Icheon-si Gyeonggi-do (KR)

Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)

Seok Min Choi of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18323999 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a gate structure with stacked gate lines, an insulating core with a first long axis and a first short axis, a memory layer surrounding the insulating core, first and second channel patterns facing each other along the first long axis, and a capping layer between the first and second channel patterns.

• The innovation involves a semiconductor device with a unique gate structure design and channel patterns for improved performance.
• The insulating core and memory layer contribute to the device's functionality and efficiency.
• The capping layer enhances the overall structure and functionality of the device.
• The first and second channel patterns play a crucial role in the device's operation and effectiveness.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in memory devices, processors, and other integrated circuits requiring high performance and efficiency.

Problems Solved: - Addresses the need for improved semiconductor device designs with enhanced functionality. - Solves challenges related to gate structure and channel pattern optimization in semiconductor devices.

Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced functionality and reliability in electronic applications. - Potential for advancements in memory storage and processing capabilities.

Commercial Applications: - The technology can be utilized in the production of high-performance electronic devices for consumer electronics, telecommunications, and computing industries.

Prior Art: - Further research is needed to determine specific prior art related to this innovative semiconductor device design.

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device technology and design for potential improvements in performance and functionality.

Questions about Semiconductor Device Innovation: 1. How does the unique gate structure design contribute to the overall performance of the semiconductor device? 2. What potential applications can benefit the most from the enhanced functionality of this semiconductor device design?

Original Abstract Submitted

A semiconductor device including: a gate structure including stacked gate lines; an insulating core located in the gate structure and including a first long axis and a first short axis; a memory layer surrounding the insulating core; first channel pattern and a second channel pattern located facing each other along the first long axis, wherein the first channel pattern and the second channel pattern are located between the insulating core and the memory layer; and a capping layer located between the first channel pattern and the second channel pattern.