18323528. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Toshifumi Hashimoto of Fujisawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18323528 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The memory plane region in the patent application includes structures with conductive layers and memory regions interconnected by via contact electrodes. The first structure has via contact electrodes in the first region, while the second structure has via contact electrodes in the second region. Transistors are electrically connected to the via contact electrodes at overlapping positions between the structures and regions.

  • The patent application describes a memory plane region with interconnected memory regions and conductive layers.
  • The first structure includes via contact electrodes in the first region, while the second structure includes via contact electrodes in the second region.
  • Transistors are electrically connected to the via contact electrodes at overlapping positions between the structures and regions.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Integrated circuits
  • Semiconductor manufacturing

Problems Solved

This technology helps in:

  • Improving memory access speed
  • Enhancing data storage capacity
  • Increasing overall performance of electronic devices

Benefits

The benefits of this technology include:

  • Faster data processing
  • Higher memory density
  • Improved efficiency in electronic devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Telecommunications
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

  • Memory plane regions with conductive layers and interconnected memory regions.

Unanswered Questions

How does this technology impact power consumption in electronic devices?

This article does not address the specific impact of this technology on power consumption in electronic devices.

What are the potential limitations of this technology in terms of scalability?

This article does not discuss the potential limitations of this technology in terms of scalability for future advancements.


Original Abstract Submitted

A memory plane region includes a first structure and a second structure having conductive layers, and includes a first memory region to a third memory region, a first region between the first memory region and the second memory region, and a second region between the second memory region and the third memory region. The first structure comprises first via contact electrodes in the first region. The second structure comprises second via contact electrodes in the second region. The first via contact electrodes are electrically connected to transistors provided at positions where the first structure and the first region overlap, and where the second structure and the first region overlap. The second via contact electrodes are electrically connected to transistors provided at positions where the first structure and the second region overlap, and where the second structure and the second region overlap.