18323440. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323440 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME
The abstract describes a three-dimensional semiconductor memory device with a peripheral structure and a cell structure.
- The cell structure includes a substrate with gate electrodes stacked on one surface and an insulating layer on the opposite surface.
- A penetration contact plug penetrates the substrate, while gapfill conductive patterns and spacers are provided to connect and space components accordingly.
Potential Applications: This technology can be used in advanced memory storage devices, such as solid-state drives and high-performance computing systems.
Problems Solved: The innovation addresses the need for increased memory density and improved performance in semiconductor memory devices.
Benefits: The three-dimensional structure allows for higher storage capacity and faster data access speeds, enhancing overall device efficiency.
Commercial Applications: This technology has significant implications for the semiconductor industry, particularly in the development of next-generation memory solutions for various electronic devices.
Questions about Three-Dimensional Semiconductor Memory Devices: 1. How does the three-dimensional structure of this memory device improve performance compared to traditional two-dimensional designs?
- The three-dimensional structure allows for increased storage capacity and faster data access speeds due to the compact arrangement of components.
2. What are the key challenges in implementing this technology on a commercial scale, and how are they being addressed?
- Challenges may include manufacturing complexity and cost, which are being addressed through advancements in fabrication processes and materials.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. The cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.
