18323427. SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER
Organization Name
Inventor(s)
Young Gwang Yoon of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323427 titled 'SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER
Simplified Explanation
The semiconductor device described in the patent application includes a gate structure with spacers on both side surfaces, an interfacial insulating layer, a gate dielectric layer, a gate barrier layer, gate side insulating layers, and a gate electrode. The gate dielectric layer has a U-shaped longitudinal cross-sectional shape and is in contact with the inner side surfaces of the spacers, surrounding the gate barrier layer. The gate side insulating layers surround the outer side surfaces of the gate barrier layer.
- Gate structure with spacers and multiple insulating layers
- U-shaped gate dielectric layer surrounding gate barrier layer
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This technology helps to:
- Improve gate structure performance
- Enhance semiconductor device reliability
Benefits
The benefits of this technology include:
- Better control of gate structure properties
- Increased efficiency in semiconductor devices
Potential Commercial Applications
The technology could be used in various commercial applications such as:
- Electronics industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to gate structures in semiconductor devices
Unanswered Questions
How does this technology compare to existing gate structure designs in terms of performance and reliability?
The article does not provide a direct comparison with existing gate structure designs.
Are there any limitations or drawbacks associated with implementing this technology in semiconductor devices?
The article does not mention any limitations or drawbacks of using this technology.
Original Abstract Submitted
A semiconductor device includes a gate structure crossing an active region of a substrate, and spacers formed on both side surfaces of the gate structure. The gate structure includes an interfacial insulating layer formed on the substrate, a gate dielectric layer formed on the interfacial insulating layer, a gate barrier layer and gate side insulating layers formed on the gate dielectric layer, and a gate electrode on the gate barrier layer. The gate dielectric layer is in contact with inner side surfaces of the spacers, and has a U-shaped longitudinal cross-sectional shape to surround a lower surface and some portions of side surfaces of the gate barrier layer. The gate side insulating layers surround outer side surfaces of the gate barrier layer.
