18323158. MEMORY PROGRAMMING simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
MEMORY PROGRAMMING
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
MEMORY PROGRAMMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323158 titled 'MEMORY PROGRAMMING
Simplified Explanation: The method described in the patent application involves programming memory cells using a coarse programming process and pulse programming without verification.
- **Coarse programming process:**
- Programming suppression on first memory cells to a first programmed state. - Presetting a pulse programming period for each programmed state to complete programming without verification.
- **Pulse programming:**
- Performing pulse programming i times on second memory cells to program them to an ith programmed state. - No programming verification is included in the coarse programming process.
Potential Applications: - This technology can be applied in the semiconductor industry for memory cell programming. - It can be used in the development of more efficient and faster memory devices.
Problems Solved: - Eliminates the need for programming verification in the coarse programming process. - Provides a more streamlined and efficient method for programming memory cells.
Benefits: - Faster programming of memory cells. - Simplified programming process. - Improved efficiency in memory device production.
Commercial Applications: Title: Advanced Memory Cell Programming Technology for Semiconductor Industry This technology can revolutionize the production of memory devices by significantly reducing programming time and improving overall efficiency. It can be utilized by semiconductor companies to enhance their memory cell programming processes, leading to faster and more reliable memory devices in the market.
Prior Art: There may be prior art related to memory cell programming methods in the semiconductor industry. Researchers can explore academic journals, patent databases, and industry publications to find relevant information on similar technologies.
Frequently Updated Research: Researchers in the semiconductor field may be conducting studies on memory cell programming techniques to improve efficiency and speed in memory device production. Stay updated on the latest advancements in memory cell programming technology to remain at the forefront of innovation in the industry.
Questions about Memory Cell Programming Technology: 1. How does this technology compare to traditional memory cell programming methods? 2. What are the potential challenges in implementing this advanced programming technique in memory device production?
1. *How does this technology improve memory cell programming efficiency compared to traditional methods?* 2. *What are the key advantages of using pulse programming without verification in memory cell programming?*
Original Abstract Submitted
A method comprises: in a coarse programming process, performing programming suppression on first memory cells, such that the first memory cells are in a first programmed state; and performing pulse programming for i−1 times on second memory cells to program the second memory cells to an ith programmed state, where i>1, and the coarse programming process does not include programming verification. In the coarse programming process, by presetting a pulse programming period of a memory cell corresponding to each programmed state, distinguishing the corresponding number of programming of the memory cell corresponding to each programmed state and completing the programming of the memory cells, without performing a verification operation on a voltage reached by the memory cells after each pulse programming in the coarse programming process.
