18322842. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Chung Jin Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18322842 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a source structure with a support source layer, gate stack structure, memory channel structure, and separation structure. The support source layer has a first source part for the memory channel structure and a second source part for the separation structure, with the first part at a lower level than the second part.
- The semiconductor device comprises a source structure with a support source layer, gate stack structure, memory channel structure, and separation structure.
- The support source layer includes a first source part for the memory channel structure and a second source part for the separation structure, with the first part at a lower level than the second part.
Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving integration of components
Benefits
The benefits of this technology include:
- Higher efficiency
- Better functionality
Potential Commercial Applications
This technology could be used in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art could be:
- Semiconductor devices with similar structures
Unanswered Questions
How does this technology impact power consumption in electronic systems?
This article does not address the specific impact of this technology on power consumption in electronic systems.
What are the potential challenges in scaling up the fabrication of these semiconductor devices?
The article does not discuss the potential challenges that may arise in scaling up the fabrication of these semiconductor devices.
Original Abstract Submitted
Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. The support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. A top surface of the first source part is at a level lower than that of a top surface of the second source part.
