18322365. VERTICAL NAND FLASH MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

VERTICAL NAND FLASH MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Seyun Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Hwaseong-si (KR)

Minhyun Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

VERTICAL NAND FLASH MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18322365 titled 'VERTICAL NAND FLASH MEMORY DEVICE

The abstract describes a vertical NAND flash memory device with multiple cell arrays, each containing a channel layer, a charge trap layer with silicon oxynitride including a metal like Ga or In, and multiple gate electrodes.

• The vertical NAND flash memory device consists of cell arrays with specific layers and electrodes.
• The charge trap layer includes silicon oxynitride with a metal component such as Ga or In.

Potential Applications:

• Data storage in electronic devices
• Memory modules in computers and smartphones

Problems Solved:

• Enhanced data storage capacity
• Improved memory performance

Benefits:

• Higher storage density
• Faster data access speeds

Commercial Applications:

• Memory chips for consumer electronics
• Storage solutions for data centers

Questions about Vertical NAND Flash Memory Devices: 1. How does the charge trap layer with silicon oxynitride improve memory performance? 2. What are the advantages of using vertical cell arrays in NAND flash memory devices?

Frequently Updated Research: Ongoing studies focus on optimizing the design and materials used in vertical NAND flash memory devices for improved performance and reliability.

Original Abstract Submitted

A vertical NAND flash memory device may include a plurality of cell arrays. Each of the plurality of cell arrays may include a channel layer, a charge trap layer on the channel layer, and a plurality of gate electrodes on the charge trap layer. The charge trap layer may include silicon oxynitride comprising a metal. The metal may include at least one of Ga or In.