18320451. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320451 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application consists of a lower structure with a lower electrode, an upper electrode covering the lower electrode, and a dielectric structure between the two electrodes. The dielectric structure is made up of two dielectric films - one with a first material and the other with a second material different from the first.
- Lower structure with lower electrode
- Upper electrode covering lower electrode
- Dielectric structure with two dielectric films of different materials
- First dielectric film with a first surface in contact with lower electrode
- Second dielectric film with a first portion extending from second surface towards first surface
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- Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
- Problems Solved
- Improved performance of semiconductor devices
- Enhanced reliability
- Better insulation between electrodes
- Benefits
- Higher efficiency
- Increased durability
- Enhanced functionality
Original Abstract Submitted
A semiconductor device includes a lower structure; a lower electrode on the lower structure; an upper electrode covering the lower electrode on the lower structure; and a dielectric structure disposed between the lower electrode and the upper electrode. The dielectric structure includes a first dielectric film including a first material and a second dielectric film including a second material different from the first material. The first dielectric film includes a first surface in contact with or facing the lower electrode and a second surface facing the first surface. The second dielectric film includes a first portion disposed in an opening of the first dielectric film and extending in a direction from the second surface toward the first surface.
