18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320423 titled 'INTEGRATED CIRCUIT DEVICE
The abstract of the patent application describes an integrated circuit (IC) device with fin-type active regions protruding from the substrate to define a trench region. The device includes source/drain regions, a device isolation film, an etch stop structure, a via power rail, and a backside power rail.
- Fin-type active regions protrude from the substrate in a first lateral direction.
- Source/drain regions are located on the fin-type active regions.
- A device isolation film is present in the trench region, apart from the substrate in a vertical direction.
- An etch stop structure fills at least a portion of the trench region between the substrate and the device isolation film.
- A via power rail connects the fin-type active regions and the source/drain regions, passing through the etch stop structure.
- A backside power rail passes through the substrate, in contact with one end of the via power rail.
Potential Applications: - This technology can be used in the development of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enhances the integration and functionality of IC devices. - Improves power distribution and signal transmission within the circuit.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced power distribution and signal integrity. - Improved overall functionality of integrated circuits.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also be utilized in the automotive industry for advanced driver assistance systems (ADAS) and in the development of IoT devices.
Questions about the technology: 1. How does the etch stop structure contribute to the functionality of the IC device? 2. What are the potential implications of using a backside power rail in this technology?
Original Abstract Submitted
An integrated circuit (IC) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
