18320020. DEEP TRENCH CAPACITORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

DEEP TRENCH CAPACITORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wei-Hang Huang of Kaohsiung City (TW)

Chung-Liang Cheng of Hsinchu (TW)

DEEP TRENCH CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18320020 titled 'DEEP TRENCH CAPACITORS

The semiconductor structure described in the patent application includes multiple layers and features, such as contact features, etch stop layers, dielectric layers, and a capacitor.

• The structure consists of a contact feature in a dielectric layer, with etch stop layers separating the dielectric layers.
• A capacitor is formed with a bottom electrode layer extending through multiple dielectric layers and etch stop layers.
• An insulator layer is placed over the bottom electrode, followed by a top electrode layer.

Potential Applications: - This technology can be used in the semiconductor industry for advanced electronic devices. - It may find applications in memory devices, sensors, and other electronic components.

Problems Solved: - The structure provides a way to efficiently integrate capacitors into semiconductor devices. - It offers a method for creating complex semiconductor structures with multiple layers.

Benefits: - Improved performance and functionality of semiconductor devices. - Enhanced integration of capacitors in electronic components.

Commercial Applications: Title: Advanced Semiconductor Structures for Electronic Devices This technology can be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Prior Art: Further research can be conducted in the field of semiconductor device structures and capacitor integration to explore existing technologies and innovations.

Frequently Updated Research: Researchers are continuously exploring new methods and materials for semiconductor device fabrication to enhance performance and efficiency.

Questions about Semiconductor Structures: 1. How does the integration of capacitors in semiconductor structures impact device performance? 2. What are the potential challenges in scaling up this technology for mass production?

Original Abstract Submitted

Semiconductor structures and methods of forming the same are provided. A semiconductor structure of the present disclosure includes a contact feature disposed in a first dielectric layer, a first etch stop layer (ESL) over the contact feature and the first dielectric layer, a second dielectric layer over the first ESL, a second ESL over the second dielectric layer, a third dielectric layer over the second ESL, a third ESL over the third dielectric layer, a fourth dielectric layer over the third ESL, and a capacitor. The capacitor includes a bottom electrode layer continuously extending along a top surface of the fourth dielectric layer and vertically through the fourth dielectric layer, the third ESL, the third dielectric layer, the second ESL, the second dielectric layer, and the first ESL, an insulator layer disposed over the bottom electrode, and a top electrode layer disposed over the insulator layer.